NDT2955
P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ
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Features

• -2.5A, -60V
• Rds(ON) = 300mΩ @ VGS = -10V
• Rds(ON) = 500mΩ @ VGS = -4.5V
• High density cell design for extremely low Rds(ON)
• High power and current handling capability in a widelyused surface mount package

Pin Configuration

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Part Numbering System

Part Marking System

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Ordering Guide

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Block Diagram

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